Hartmut Grabinski, Dieter Treytnar, Uwe Arz, Faïez Ktata, Petra Nordholz
Abstract
The SIA Roadmap shows a very aggressive drive to
deep submicron designs. In this paper we discuss different approaches to the
time domain simulation of crosstalk in deep submicron interconnects. We compare
a technique based on frequency-independent parameters using a fast tool
based on a distributed line model, against a new time domain simulator which can
efficiently make use of the frequency dependent line parameters. The geometry of
the line structures investigated is taken from the SIA Roadmap. This comparison
constitutes an important contribution to the still open question if it is
necessary to take the frequency dependence of line parameters in high-speed
digital
waveform simulations into account or not. The lines' cross sections are taken
from the SIA Roadmap going from 250 nm down to 100 nm technology design.
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