Characterization of Asymmetric Coupled CMOS Lines

Uwe Arz, Dylan F. Williams, David K. Walker, Janet E. Rogers, Markus Rudack, Dieter Treytnar, Hartmut Grabinski

Characterization of Asymmetric Coupled CMOS Lines

Abstract
This paper investigates the properties of asymmetric coupled lines built in a 0.25 um CMOS technology over the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port scattering-parameter measurements agree well with numerical predictions. To our knowledge, this is the first complete experimental characterization of asymmetric coupled lines on silicon ever reported.

This paper has been published in:

IEEE MTT-S International Microwave Symposium Digest, pp. 609-612, Boston, MA, June 11-16, 2000.

This document is available as a PDF (104k) file .